Huayi Microelectronics Co., Ltd. Transistors HYG180N10LS1P

Description
100V 50A 16.5mΩ@10V,25A 93.7W 1.8V@250uA 1 N-Channel TO-220FB-3 MOSFETs ROHS
  • Transistors - HYG180N10LS1P - ODG (Origin Data Global)
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Description
100V 50A 16.5mΩ@10V,25A 93.7W 1.8V@250uA 1 N-Channel TO-220FB-3 MOSFETs ROHS
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Transistors - HYG180N10LS1P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG180N10LS1P
Transistors HYG180N10LS1P
100V 50A 16.5mΩ@10V,25A 93.7W 1.8V@250uA 1 N-Channel TO-220FB-3 MOSFETs ROHS

100V 50A 16.5mΩ@10V,25A 93.7W 1.8V@250uA 1 N-Channel TO-220FB-3 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG180N10LS1P
Product Name Transistors
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