Huayi Microelectronics Co., Ltd. Transistors HYG090ND06LS1C2

Description
60V 56A 60W 8mΩ@10V,20A 1.9V@250uA 2 N-Channel PDFN-8(5.2x5.9) MOSFETs ROHS
  • Transistors - HYG090ND06LS1C2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 56A 60W 8mΩ@10V,20A 1.9V@250uA 2 N-Channel PDFN-8(5.2x5.9) MOSFETs ROHS

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Transistors - HYG090ND06LS1C2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG090ND06LS1C2
Transistors HYG090ND06LS1C2
60V 56A 60W 8mΩ@10V,20A 1.9V@250uA 2 N-Channel PDFN-8(5.2x5.9) MOSFETs ROHS

60V 56A 60W 8mΩ@10V,20A 1.9V@250uA 2 N-Channel PDFN-8(5.2x5.9) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG090ND06LS1C2
Product Name Transistors
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