Huayi Microelectronics Co., Ltd. Transistors HYG064N08NA1B

Description
80V 120A 6.4mΩ@10V,40A 208W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
  • Transistors - HYG064N08NA1B - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
80V 120A 6.4mΩ@10V,40A 208W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
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Transistors - HYG064N08NA1B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG064N08NA1B
Transistors HYG064N08NA1B
80V 120A 6.4mΩ@10V,40A 208W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

80V 120A 6.4mΩ@10V,40A 208W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG064N08NA1B
Product Name Transistors
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