Huayi Microelectronics Co., Ltd. Transistors HYG055N08NS1B

Description
80V 120A 5.3mΩ@10V,50A 187.5W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
  • Transistors - HYG055N08NS1B - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
80V 120A 5.3mΩ@10V,50A 187.5W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

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Transistors - HYG055N08NS1B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG055N08NS1B
Transistors HYG055N08NS1B
80V 120A 5.3mΩ@10V,50A 187.5W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

80V 120A 5.3mΩ@10V,50A 187.5W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG055N08NS1B
Product Name Transistors
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