Huayi Microelectronics Co., Ltd. Transistors HYG054N09NS1B

Description
85V 135A 4.8mΩ@10V,50A 187.5W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
  • Transistors - HYG054N09NS1B - ODG (Origin Data Global)
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Description
85V 135A 4.8mΩ@10V,50A 187.5W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
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Transistors - HYG054N09NS1B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG054N09NS1B
Transistors HYG054N09NS1B
85V 135A 4.8mΩ@10V,50A 187.5W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

85V 135A 4.8mΩ@10V,50A 187.5W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG054N09NS1B
Product Name Transistors
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