Huayi Microelectronics Co., Ltd. Transistors HYG028N10NS1P

Description
100V 230A 300W 2.6mΩ@10V,50A 3V@250uA 1 N-Channel TO-220FB-3L MOSFETs ROHS
  • Transistors - HYG028N10NS1P - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 230A 300W 2.6mΩ@10V,50A 3V@250uA 1 N-Channel TO-220FB-3L MOSFETs ROHS

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Transistors - HYG028N10NS1P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG028N10NS1P
Transistors HYG028N10NS1P
100V 230A 300W 2.6mΩ@10V,50A 3V@250uA 1 N-Channel TO-220FB-3L MOSFETs ROHS

100V 230A 300W 2.6mΩ@10V,50A 3V@250uA 1 N-Channel TO-220FB-3L MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG028N10NS1P
Product Name Transistors
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