Huayi Microelectronics Co., Ltd. Transistors HYG028N10NS1B6

Description
100V 230A 2.4mΩ@10V,50A 300W 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS
  • Transistors - HYG028N10NS1B6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 230A 2.4mΩ@10V,50A 300W 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS
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Transistors - HYG028N10NS1B6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG028N10NS1B6
Transistors HYG028N10NS1B6
100V 230A 2.4mΩ@10V,50A 300W 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS

100V 230A 2.4mΩ@10V,50A 300W 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG028N10NS1B6
Product Name Transistors
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