Huayi Microelectronics Co., Ltd. Transistors HYG023N03LR1D

Description
30V 110A 2.1mΩ@10V,20A 62.5W 1.7V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
  • Transistors - HYG023N03LR1D - ODG (Origin Data Global)
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Description
30V 110A 2.1mΩ@10V,20A 62.5W 1.7V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
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Transistors - HYG023N03LR1D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG023N03LR1D
Transistors HYG023N03LR1D
30V 110A 2.1mΩ@10V,20A 62.5W 1.7V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS

30V 110A 2.1mΩ@10V,20A 62.5W 1.7V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG023N03LR1D
Product Name Transistors
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