Huayi Microelectronics Co., Ltd. Transistors HYG016N10NS1B6

Description
TO-263-6L MOSFETs ROHS
Request a Quote
Description
TO-263-6L MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors HYG016N10NS1B6
TO-263-6L MOSFETs ROHS

TO-263-6L MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG016N10NS1B6
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 20 GHz, 800 um Discrete GaAs pHEMT Die - QPD2080D - Qorvo
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 800 um Discrete GaAs pHEMT Die
Package Type Die
View Details
3 suppliers
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIGB50N65H5 - AIGB50N65H5 - Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-263; PG-TO263-3
Transistor Grade / Operating Range Automotive
View Details
Transistor - 4700471 - Radwell International
Allen-Bradley / Rockwell Automation
View Details