Huayi Microelectronics Co., Ltd. Transistors HY4008NA2B

Description
TO-263-2 MOSFETs ROHS
  • Transistors - HY4008NA2B - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
TO-263-2 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HY4008NA2B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HY4008NA2B
Transistors HY4008NA2B
TO-263-2 MOSFETs ROHS

TO-263-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY4008NA2B
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R020M1 - AIMBG120R020M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R020M1
AIMBG120R020M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor - TGF2929-FL - Qorvo
Qorvo
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
TGF2929-FL
Specs
Transistor Technology / Material GaN
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
3 suppliers
AMP, TRANSIMP, 11.3GBPS, RSSI, TO46 - More Details - 815-ONET8541TY - Utmel Electronic Limited
Texas Instruments
AMP, TRANSIMP, 11.3GBPS, RSSI, TO46 - More Details
ONET8541TY
View Details
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR - ALD212904SAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR
ALD212904SAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
4 suppliers