Huayi Microelectronics Co., Ltd. Transistors HY3810B6

Description
100V 218A 375W 3.7mΩ@10V,90A 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS
  • Transistors - HY3810B6 - ODG (Origin Data Global)
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Description
100V 218A 375W 3.7mΩ@10V,90A 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS
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Transistors - HY3810B6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HY3810B6
Transistors HY3810B6
100V 218A 375W 3.7mΩ@10V,90A 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS

100V 218A 375W 3.7mΩ@10V,90A 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY3810B6
Product Name Transistors
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