Huayi Microelectronics Co., Ltd. Transistors HY3208NA3P

Description
80V 120A 7mΩ@10V,40A 208W 3V@250uA 1 N-Channel TO-220FB-3 MOSFETs ROHS
Description
80V 120A 7mΩ@10V,40A 208W 3V@250uA 1 N-Channel TO-220FB-3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HY3208NA3P - ODG (Origin Data Global)
Shenzhen, China
Transistors
HY3208NA3P
Transistors HY3208NA3P
80V 120A 7mΩ@10V,40A 208W 3V@250uA 1 N-Channel TO-220FB-3 MOSFETs ROHS

80V 120A 7mΩ@10V,40A 208W 3V@250uA 1 N-Channel TO-220FB-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY3208NA3P
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor - QPD1008L - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
3 suppliers
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY - ALD111933SAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers
Transistor - 436165 - Radwell International
Fuji Electric Corp. of America
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1610-T2-A - 906305-2SA1610-T2-A - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details