Huashuo Semiconductor Transistors HSX044N25

Description
250V 55A 350W 34mΩ@10V,5A 5V@250uA 1 N-Channel TO-247 MOSFETs ROHS
  • Transistors - HSX044N25 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
250V 55A 350W 34mΩ@10V,5A 5V@250uA 1 N-Channel TO-247 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HSX044N25 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HSX044N25
Transistors HSX044N25
250V 55A 350W 34mΩ@10V,5A 5V@250uA 1 N-Channel TO-247 MOSFETs ROHS

250V 55A 350W 34mΩ@10V,5A 5V@250uA 1 N-Channel TO-247 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HSX044N25
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor - T2G6003028-FS - Qorvo
Qorvo
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor
T2G6003028-FS
Specs
Transistor Technology / Material GaN
Package Type NI-200
Transistor Grade / Operating Range Military
View Details
4 suppliers
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110904SAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY
ALD110904SAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers
IGBT - 223674061 - Radwell International
Fuji Electric Corp. of America
IGBT
6MBP80VBA060-51
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1317T - 855026-2SA1317T - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1317T
2SA1317T
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details