Huashuo Semiconductor Transistors HSW8810

Description
20V 6A 1.25W 20mΩ@4.5V,4A 1.2V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS
Request a Quote
Description
20V 6A 1.25W 20mΩ@4.5V,4A 1.2V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HSW8810 - ODG (Origin Data Global)
Shenzhen, China
Transistors
HSW8810
Transistors HSW8810
20V 6A 1.25W 20mΩ@4.5V,4A 1.2V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS

20V 6A 1.25W 20mΩ@4.5V,4A 1.2V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HSW8810
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor - TGF3020-SM - Qorvo
Specs
Transistor Technology / Material GaN
Package Type QFN
Transistor Grade / Operating Range Military
View Details
4 suppliers
Transistor - 32467902 - Radwell International
Fuji Electric Corp. of America
View Details
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD ENHANCED MODE MATCHED PAIR - ALD310708APCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type PDIP16
View Details
4 suppliers
45 V, 1 A NPN medium power transistors - BC54-16PASX - Nexperia B.V.
Specs
Package Type SOT1061D
View Details
9 suppliers