Huashuo Semiconductor Transistors HSBB50N02

Description
20V 50A 7mΩ@4.5V,20A 29W 900mV@250uA 1 N-Channel PRPAK-8(3x3) MOSFETs ROHS
  • Transistors - HSBB50N02 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
20V 50A 7mΩ@4.5V,20A 29W 900mV@250uA 1 N-Channel PRPAK-8(3x3) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HSBB50N02 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HSBB50N02
Transistors HSBB50N02
20V 50A 7mΩ@4.5V,20A 29W 900mV@250uA 1 N-Channel PRPAK-8(3x3) MOSFETs ROHS

20V 50A 7mΩ@4.5V,20A 29W 900mV@250uA 1 N-Channel PRPAK-8(3x3) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HSBB50N02
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB817 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KCB817
View Details
DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2953 - Qorvo
Qorvo
DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT
TGF2953
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
2 suppliers
502A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E502 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
502A IGBT MODULE FOR ONE PHASE 600/690V
SK-H1-QOUT-E502
Specs
Transistor Type IGBT
View Details
IGBT - 192352301 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI200L-060
Specs
Transistor Type IGBT
View Details