Huashuo Semiconductor Transistors HSBA4119

Description
40V 120A 3.8mΩ@10V,30A 150W 2.5V@250uA 1 Piece P-Channel PRPAK-8(5x6) MOSFETs ROHS
  • Transistors - HSBA4119 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
40V 120A 3.8mΩ@10V,30A 150W 2.5V@250uA 1 Piece P-Channel PRPAK-8(5x6) MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HSBA4119 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HSBA4119
Transistors HSBA4119
40V 120A 3.8mΩ@10V,30A 150W 2.5V@250uA 1 Piece P-Channel PRPAK-8(5x6) MOSFETs ROHS

40V 120A 3.8mΩ@10V,30A 150W 2.5V@250uA 1 Piece P-Channel PRPAK-8(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HSBA4119
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs - - Win Source Electronics
Qorvo
Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
UF3SC065007K4S
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type TO-247; SOT3
View Details
3 suppliers
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR - ALD210804SCL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR
ALD210804SCL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC16
View Details
4 suppliers
Transistor - 4899912 - Radwell International
Fuji Electric Corp. of America
Transistor
EV1265M
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA2015-TD-E - 855068-2SA2015-TD-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA2015-TD-E
2SA2015-TD-E
Specs
Package Type SOT3
View Details