Guangdong Inmark Electronics Co., Ltd. Transistors MOT5122T

Description
120V 260A 2mΩ@10V,50A 375W 4V@250uA 1 N-Channel TOLL-8 MOSFETs ROHS
  • Transistors - MOT5122T - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
120V 260A 2mΩ@10V,50A 375W 4V@250uA 1 N-Channel TOLL-8 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - MOT5122T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
MOT5122T
Transistors MOT5122T
120V 260A 2mΩ@10V,50A 375W 4V@250uA 1 N-Channel TOLL-8 MOSFETs ROHS

120V 260A 2mΩ@10V,50A 375W 4V@250uA 1 N-Channel TOLL-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number MOT5122T
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

NPN Bipolar Transistor - 2N2222A - Micross Components, Inc.
Micross Components, Inc.
NPN Bipolar Transistor
2N2222A
View Details
Qorvo
RF JFET Transistors
QPD0305TR13
Specs
Transistor Type JFET
View Details
IGBT MODULE,1 PHASE,FR11,460A,600V CLASS - SK-H1-QOUT-E460 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
IGBT MODULE,1 PHASE,FR11,460A,600V CLASS
SK-H1-QOUT-E460
Specs
Transistor Type IGBT
View Details
Igbt, Module, Dual N Channel, 1.7Kv, 900A; Continuous Collector Current Fuji Electric - 54W0212 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Module, Dual N Channel, 1.7Kv, 900A; Continuous Collector Current Fuji Electric
2MBI650VXA-170E-50
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details