Goodwork Semiconductor Co., Ltd. Transistors G1-MMBT5551

Description
160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS
  • Transistors - G1-MMBT5551 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS
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Transistors - G1-MMBT5551 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
G1-MMBT5551
Transistors G1-MMBT5551
160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS

160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number G1-MMBT5551
Product Name Transistors
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