Goford Semiconductor Co., Ltd. Transistors XM2N200

Description
190V 2A 3W 560mΩ@4.5V,1A 3V@250uA 1 N-Channel TO-92-3 MOSFETs ROHS
  • Transistors - XM2N200 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
190V 2A 3W 560mΩ@4.5V,1A 3V@250uA 1 N-Channel TO-92-3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - XM2N200 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
XM2N200
Transistors XM2N200
190V 2A 3W 560mΩ@4.5V,1A 3V@250uA 1 N-Channel TO-92-3 MOSFETs ROHS

190V 2A 3W 560mΩ@4.5V,1A 3V@250uA 1 N-Channel TO-92-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number XM2N200
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 129970135 - Radwell International
Fuji Electric Corp. of America
IGBT Module
7MBR150VR120-50
Specs
Transistor Type IGBT
View Details
60 V, N-channel Trench MOSFET - 2N7002AKM-QYL - Nexperia B.V.
Nexperia B.V.
60 V, N-channel Trench MOSFET
2N7002AKM-QYL
Specs
Transistor Type MOSFET
Package Type SOT883 SOT883
View Details
2 suppliers
Single FETs, MOSFETs - 64-9144TR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
64-9144
Specs
Polarity N-Channel
Package Type DirectFET™ Isometric ST
View Details
2 suppliers
Transistor - 8220858 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
1336-QOUT-SP12B
View Details