Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GT115N15F

The GT115N15F is an N-channel enhancement mode power MOSFET designed for power switching and DC/DC converter applications. It is packaged in a TO-220F case and rated for a drain-source voltage of 150 V, with a continuous drain current of 46 A at 25°C and 29 A at 100°C. The device has a maximum on-resistance of 13 mΩ at VGS = 10 V and a power dissipation of 55 W. It features a thermal resistance of 2.3 °C/W junction-to-case and 52 °C/W junction-to-ambient. The MOSFET is 100% avalanche tested with a single pulse avalanche energy of 182 mJ and is RoHS compliant.