Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GT025N06F

The GT025N06F is an N-channel enhancement mode MOSFET designed for power switching, DC/DC conversion, and synchronous rectification. It is packaged in a TO-220F case with a maximum drain-source voltage of 60V, continuous drain current of 120A at 25°C, and power dissipation of 55W. The on-resistance is less than 3mΩ at VGS=10V and less than 3.6mΩ at VGS=4.5V. The device is 100% avalanche tested with a single-pulse avalanche energy rating of 420mJ. Thermal resistance from junction to case is 2.3°C/W and junction to ambient is 50°C/W. It operates from -55°C to 150°C and is RoHS compliant.