N/P Channel: N-CH
Voltage(VDS): 30V
Current(ID): 209A
RDS(on): RD(max)<2.2mΩ@10V
VTH: VTH1.0V~2.5V
Package: TO-220
MOSFET N-CH ESD 30V 209A TO-220
MOSFET N-CH,30V,209A, TO-220 Product overview: GT011N03TE from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 209A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 209A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-GT011N03TE can be used for catalog matching and distributor lookup.
30V 209A 1.8mΩ@10V 2.5V 1 N-Channel TO-220 MOSFETs ROHS
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 3141-GT011N03TE-ND | 285-GT011N03TE | GT011N03TE | |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT011N03TE | Single FETs, MOSFETs | 30V 209A TO-220 MOSFET Transistor | Transistors |
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 | TO-220 |
