Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GC300N65F

The GC300N65F is an N-channel enhancement mode power MOSFET designed for AC-DC switching power supplies, PFC, and industrial power applications. It is packaged in a TO-220F case and rated for a drain-source voltage of 650 V, with a continuous drain current of 13 A at 25°C and 8 A at 100°C. The device has a maximum on-resistance of 300 mΩ at VGS = 10 V and dissipates up to 33 W. It features 100% avalanche testing with a single-pulse avalanche energy of 40 mJ, operates from -55°C to 150°C, and meets RoHS compliance. Thermal resistance is 3.78°C/W from junction to case and 64°C/W from junction to ambient.