The GC085N65QF is an N-channel enhancement mode power MOSFET designed for power switching and DC/DC converter applications. It is packaged in a TO-247 case with a maximum drain-source voltage of 650V and a continuous drain current of 40A at 25°C. The device has a drain-source on-resistance of up to 85mΩ at Vgs=10V and a power dissipation of 299W. It features an ultra-fast body diode, 100% avalanche testing with a single pulse avalanche energy of 180mJ, and is RoHS compliant. Thermal resistance from junction to case is 0.42°C/W, and junction and storage temperatures range from -55°C to 150°C.
MOSFET N-CH 650V 40A 299W TO-247
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 3141-GC085N65QF-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
