Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GC085N65FF

The GC085N65FF is an N-channel enhancement mode power MOSFET designed for AC-DC SMPS applications including PFC and industrial power conversion. It is packaged in a TO-220F case with a maximum drain-source voltage of 650 V, a continuous drain current of 34 A at 25°C, and a drain-source on-resistance of less than 85 mΩ at Vₐₓ = 10 V. The device features a 180 mJ single-pulse avalanche energy rating, an ultra-fast body diode, and is RoHS compliant. Thermal resistance is 2.2 °C/W from junction to case and 45 °C/W from junction to ambient. The operating junction and storage temperature range is -55 °C to 150 °C.