The GC060N65QF is an N-channel enhancement mode power MOSFET designed for AC-DC SMPS applications such as PFC and industrial power conversion. It is housed in a TO-247 package and rated for a drain-source voltage of 650 V, with a continuous drain current of 50 A at 25°C and an on-resistance of less than 60 mΩ at V<sub>GS</sub> = 10 V. The device includes an ultra-fast body diode, is 100% avalanche tested with a single pulse avalanche energy of 845 mJ, and meets RoHS compliance and UL 94 V-0 flammability standards. Thermal resistance from junction to case is 0.32 °C/W, and junction temperature operates from -55°C to 150°C.
MOSFET,N-CH,650V,50A
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 3141-GC060N65QF-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
