N/P Channel: N-CH
Voltage(VDS): 150V
Current(ID): 2A
RDS(on): RD(max)<370mΩ@10V
VTH: VTH1.0V~2.5V
Package: SOT-223
MOSFET N-CH ESD 150V 2A SOT-223
MOSFET N-CH ESD 150V 2A SOT-223
MOSFET N-CH ESD 150V 2A SOT-223
MOSFET N-CH ESD 150V 2A SOT-223 Product overview: G3K8N15HE from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G3K8N15HE can be used for catalog matching and distributor lookup.
MOSFET N-CH ESD 150V 2A SOT-223
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 3141-G3K8N15HECT-ND | 278-G3K8N15HE | G3K8N15HE | |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G3K8N15HE | Single FETs, MOSFETs | 150V 2A MOSFET Transistor | Single FETs, MOSFETs |
| Package Type | SOT3 | SOT223; TO-261-4, TO-261AA | Tape & Reel (TR) | SOT223; SOT-223-3 |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| PD | 2160 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
