N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 9A
RDS(on): RD(max)<12mΩ@10V
VTH: VTH1.0V~2.5V
Package: SOP-8
MOSFET, N-CH,60V,9A,RD(MAX)<
MOSFET, N-CH,60V,9A,RD(MAX)<
MOSFET, N-CH,60V,9A,RD(MAX)<
MOSFET N-CH 60V 9A SOP-8 Product overview: G130N06S from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G130N06S can be used for catalog matching and distributor lookup.
MOSFET, N-CH,60V,9A,RD(MAX)<
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 3141-G130N06SDKR-ND | 278-G130N06S | G130N06S | |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G130N06S | Single FETs, MOSFETs | 60V 9A MOSFET Transistor | Single FETs, MOSFETs |
| Package Type | SOT3 | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| PD | 2600 milliwatts | 2600 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |