Goford Semiconductor Co., Ltd. 10V MOSFET Transistor G08N06S

N60V, RD(MAX)<30M@10V,RD(MAX)<40>

Win Source Part Number: 1376814-G08N06S
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 46 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Series: G
Product Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 30 V
Power Dissipation (Max): 2W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 5A
RDS(on): RD(max)<30mΩ@10V
VTH: VTH1.1V~2.5V
Package: SOP-8

N60V, RD(MAX)<30M@10V,RD(MAX)<40

N60V, RD(MAX)<30M@10V,RD(MAX)<40

N60V, RD(MAX)<30M@10V,RD(MAX)<40

N60V, RD(MAX)<30M@10V,RD(MAX)<40