Goford Semiconductor Co., Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - G080P06M G080P06M

Description
N/P Channel: P-CH Voltage(VDS): 60V Current(ID): 195A RDS(on): RD(max)<7.5mΩ@10V VTH: VTH2.0V~2.4V~4 Package: TO-263
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - G080P06M - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 3141-G080P06MTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 3141-G080P06MCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 3141-G080P06MDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - G080P06M - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
N/P Channel: P-CH Voltage(VDS): 60V Current(ID): 195A RDS(on): RD(max)<7.5mΩ@10V VTH: VTH2.0V~2.4V~4 Package: TO-263
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G080P06M - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G080P06M
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G080P06M
N/P Channel: P-CH Voltage(VDS): 60V Current(ID): 195A RDS(on): RD(max)<7.5mΩ@10V VTH: VTH2.0V~2.4V~4 Package: TO-263

N/P Channel: P-CH
Voltage(VDS): 60V
Current(ID): 195A
RDS(on): RD(max)<7.5mΩ@10V
VTH: VTH2.0V~2.4V~4
Package: TO-263

Buy Now Datasheet
Single FETs, MOSFETs - 3141-G080P06MTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G080P06MTR-ND
Single FETs, MOSFETs 3141-G080P06MTR-ND
P-60V,-195A,RD(MAX)< 7.5M@-10V,VT

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

Buy Now Datasheet
Single FETs, MOSFETs - 3141-G080P06MCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G080P06MCT-ND
Single FETs, MOSFETs 3141-G080P06MCT-ND
P-60V,-195A,RD(MAX)< 7.5M@-10V,VT

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

Buy Now Datasheet
Single FETs, MOSFETs - 3141-G080P06MDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G080P06MDKR-ND
Single FETs, MOSFETs 3141-G080P06MDKR-ND
P-60V,-195A,RD(MAX)< 7.5M@-10V,VT

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V -195A -10V MOSFET Transistor
278-G080P06M
60V -195A -10V MOSFET Transistor 278-G080P06M
P-60V,-195A,RD(MAX)< 7.5M@-10V,VT Product overview: G080P06M from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, -195A, -10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, -195A, -10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G080P06M can be used for catalog matching and distributor lookup.

P-60V,-195A,RD(MAX)<7.5M@-10V,VT Product overview: G080P06M from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, -195A, -10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, -195A, -10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G080P06M can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - G080P06M - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
G080P06M
Single FETs, MOSFETs G080P06M
P-60V,-195A,RD(MAX)< 7.5M@-10V,VT

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
G080P06M
Triode/MOS Tube/Transistor >> MOSFETs G080P06M
60V 195A 6.2mΩ@10V 4V P Channel TO-263 MOSFETs ROHS

60V 195A 6.2mΩ@10V 4V P Channel TO-263 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 3141-G080P06MTR-ND 278-G080P06M G080P06M G080P06M
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - G080P06M Single FETs, MOSFETs 60V -195A -10V MOSFET Transistor Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263
Polarity P-Channel P-Channel; P-Channel P-Channel
PD 294000 milliwatts 294000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape & Reel (TR)
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