P-60V,-195A,RD(MAX)<
P-60V,-195A,RD(MAX)<
P-60V,-195A,RD(MAX)<
P-60V,-195A,RD(MAX)<
P-60V,-195A,RD(MAX)<
N/P Channel: P-CH
Voltage(VDS): 60V
Current(ID): 195A
RDS(on): RD(max)<7.5mΩ@10V
VTH: VTH2.0V~2.4V~4
Package: TO-263
60V 195A 6.2mΩ@10V 4V P Channel TO-263 MOSFETs ROHS
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | G080P06M | 278-G080P06M | 3141-G080P06MTR-ND | G080P06M | |
| Product Name | Single FETs, MOSFETs | 60V -195A -10V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G080P06M | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 60 volts | 60 volts | |||
| IDSS | 195000 milliamps | ||||
| PD | 294000 milliwatts | 294000 milliwatts |