N200V, 18A,RD<0.19@10V,VTH1
N200V, 18A,RD<0.19@10V,VTH1
N200V, 18A,RD<0.19@10V,VTH1
N/P Channel: N-CH
Voltage(VDS): 200V
Current(ID): 18A
RDS(on): RD(max)<0.19Ω@10V
VTH: VTH1.0V~3.0V
Package: TO-220F
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 18N20F | 3141-18N20F-ND | 278-18N20F | |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 18A 10V 0V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 18N20F |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 200 volts | |||
| IDSS | 18000 milliamps |