FLASH - NOR Memory IC 256Mb (32M x 8) SPI - Quad I/O 133MHz 7ns 8-WSON (6x8)
FLASH - NOR Memory IC 256Mb (32M x 8) SPI - Quad I/O 133MHz 7ns 8-WSON (6x8)
FLASH - NOR Memory IC 256Mb (32M x 8) SPI - Quad I/O 133MHz 7ns 8-WSON (6x8)
Win Source Part Number: 984128-GD25Q256EYIGR
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Type: Non-Volatile
Memory Size: 256Mb (32M x 8)
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: FLASH
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
ECCN: 3A991B1A
Fake Threat In the Open Market: 50 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: GigaDevice Semiconductor (HK) Limited
Other Names: 1970-GD25Q256EYIGRTR
Base Product Number: GD25Q256
IC FLASH 256MBIT SPI/QUAD 8WSON Product overview: GD25Q256EYIGR from GigaDevice is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Quad. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Quad, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-GD25Q256EYIGR can be used for catalog matching and distributor lookup.
256MBIT NOR FLASH /3.3V /WSON8 8
FLASH - NOR Memory IC 256Mbit SPI - Quad I/O 133 MHz 7 ns 8-WSON (6x8)
256MBIT NOR FLASH /3.3V /WSON8 8
256Mbit SPI 133MHz WSON-8-EP(6x8) NOR FLASH ROHS
256MBIT NOR FLASH /3.3V /WSON8 8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1970-GD25Q256EYIGRTR-ND | 984128-GD25Q256EYIGR | 774-GD25Q256EYIGR | GD25Q256EYIGR | GD25Q256EYIGR | GD25Q256EYIGR | GD25Q256EYIGR | GD25Q256EYIGR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Quad Memory IC and Storage Component | Memory | Memory | Memory | Memory >> NOR FLASH | Integrated Circuits (ICs) - Memory |
| Memory Category | Flash | Flash; Non-Volatile | Flash; Non-Volatile | Flash; Flash | Flash; FLASH | Flash; FLASH - NOR | Flash | Flash; Non-Volatile |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | ||
| Package Type | 8-WDFN Exposed Pad | Tape & Reel (TR) | 8-WDFN Exposed Pad | 8-WDFN Exposed Pad | ||||
| Supply Voltage | 2.7V ~ 3.6V | 2.7V ~ 3.6V | 3.6V; 2.7V ~ 3.6V | 3.6V; 2.7V ~ 3.6V | 2.7V ~ 3.6V | 2.7V~3.6V | 3.6V; 2.7V ~ 3.6V |
