The IGBT SiC Diode Co-pack, part number 20T5182, features a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 100A. It utilizes Optimal Punch Through (OPT) technology and includes a SiC freewheeling diode, which contributes to its fast switching speeds and low switching losses. The device operates efficiently across a wide temperature range of -40¬8C to +150¬8C and is RoHS compliant. This product is designed for high-performance applications such as solar inverters, aerospace actuators, server power supplies, resonant inverters over 100 kHz, inductive heating, and electronic welders. The package dimensions are 38mm x 25.4mm x 12mm, and it is housed in an industry-standard SOT-227 package. The thermal resistance from junction to case is 0.19 K/W for the IGBT and 0.43 K/W for the SiC diode, indicating effective thermal management capabilities. Engineers considering this component should note its high junction temperature tolerance and superior RBSOA/SCSOA capabilities, making it suitable for demanding applications.
IGBT SIC DIODE COPACK, 1200V, 100A, SOT227; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:-; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 20T5182 |
| Product Name | Igbt Sic Diode Copack, 1200V, 100A, Sot227; Continuous Collector Current Genesic Semiconductor |
| TJ | ? to 150 C (? to 302 F) |
