GeneSiC Semiconductor, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs G3R45MT17D

Description
Win Source Part Number: 1350562-G3R45MT17D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: G3R™ Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1700 V Power Dissipation (Max): 438W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Vgs (Max): ±15V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: GeneSiC Semiconductor Base Product Number: G3R45 Drive Voltage (Max Rds On, Min Rds On): 15V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V Vgs(th) (Max) @ Id: 2.7V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1350562-G3R45MT17D - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - G3R45MT17D - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • Sic Mosfet, N-Ch, 1.7Kv, 61A, 438W; Mosfet Module Configuration Genesic Semiconductor - 89AH0991 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1350562-G3R45MT17D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: G3R™ Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1700 V Power Dissipation (Max): 438W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Vgs (Max): ±15V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: GeneSiC Semiconductor Base Product Number: G3R45 Drive Voltage (Max Rds On, Min Rds On): 15V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V Vgs(th) (Max) @ Id: 2.7V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1350562-G3R45MT17D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1350562-G3R45MT17D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1350562-G3R45MT17D
Win Source Part Number: 1350562-G3R45MT17D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: G3R™ Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1700 V Power Dissipation (Max): 438W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Vgs (Max): ±15V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: GeneSiC Semiconductor Base Product Number: G3R45 Drive Voltage (Max Rds On, Min Rds On): 15V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V Vgs(th) (Max) @ Id: 2.7V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V

Win Source Part Number: 1350562-G3R45MT17D
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: G3R™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Power Dissipation (Max): 438W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Vgs (Max): ±15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: GeneSiC Semiconductor
Base Product Number: G3R45
Drive Voltage (Max Rds On, Min Rds On): 15V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - G3R45MT17D - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
G3R45MT17D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs G3R45MT17D
SIC MOSFET N-CH 61A TO247-3

SIC MOSFET N-CH 61A TO247-3

Supplier's Site
Sic Mosfet, N-Ch, 1.7Kv, 61A, 438W; Mosfet Module Configuration Genesic Semiconductor - 89AH0991 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Sic Mosfet, N-Ch, 1.7Kv, 61A, 438W; Mosfet Module Configuration Genesic Semiconductor
89AH0991
Sic Mosfet, N-Ch, 1.7Kv, 61A, 438W; Mosfet Module Configuration Genesic Semiconductor 89AH0991
SIC MOSFET, N-CH, 1.7KV, 61A, 438W; MOSFET Module Configuration:Single ; Continuous Drain Current Id:61A; Drain Source Voltage Vds:1.7kV; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes

SIC MOSFET, N-CH, 1.7KV, 61A, 438W; MOSFET Module Configuration:Single; Continuous Drain Current Id:61A; Drain Source Voltage Vds:1.7kV; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1350562-G3R45MT17D G3R45MT17D 89AH0991
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Mosfet, N-Ch, 1.7Kv, 61A, 438W; Mosfet Module Configuration Genesic Semiconductor
Polarity N-Channel
PD 438000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data