Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series: G3R™
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Supplier Device Package: TO-263-7
SIC MOSFET N-CH 9A TO263-7 Product overview: G3R450MT17J from GeneSiC Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G3R450MT17J can be used for catalog matching and distributor lookup.
SIC MOSFET N-CH 9A TO263-7
SIC MOSFET, N-CH, 1.7KV, 9A, 91W; MOSFET Module Configuration:Single
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-G3R450MT17J | G3R450MT17J | 89AH0994 | |
| Product Name | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | 9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Mosfet, N-Ch, 1.7Kv, 9A, 91W; Mosfet Module Configuration Genesic Semiconductor |
| Polarity | N-Channel | N-Channel | ||
| Package Type | TO-263; SOT3 | Tube | 454 pF @ 1000 V | TO-3 |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 1700 volts | |||
| Transconductance | 0.0018 kS |