GeneSiC Semiconductor, Inc. Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs G3R160MT12J

Description
Manufacturer: GeneSiC Semiconductor Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Series: G3R™ Package: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 128W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
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Description
Manufacturer: GeneSiC Semiconductor Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Series: G3R™ Package: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 128W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: GeneSiC Semiconductor Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Series: G3R™ Package: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 128W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V

Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series: G3R™
Package: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 128W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V

Buy Now Datasheet
Sic Mosfet, N-Ch, 1.2Kv, 22A, 128W; Mosfet Module Configuration Genesic Semiconductor - 89AH0977 - Newark, An Avnet Company
Chicago, IL, United States
Sic Mosfet, N-Ch, 1.2Kv, 22A, 128W; Mosfet Module Configuration Genesic Semiconductor
89AH0977
Sic Mosfet, N-Ch, 1.2Kv, 22A, 128W; Mosfet Module Configuration Genesic Semiconductor 89AH0977
SIC MOSFET, N-CH, 1.2KV, 22A, 128W; MOSFET Module Configuration:Single ; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2kV; No. of Pins:7Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.69V RoHS Compliant: Yes

SIC MOSFET, N-CH, 1.2KV, 22A, 128W; MOSFET Module Configuration:Single; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2kV; No. of Pins:7Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.69V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - G3R160MT12J - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
G3R160MT12J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs G3R160MT12J
SIC MOSFET N-CH 19A TO263-7

SIC MOSFET N-CH 19A TO263-7

Supplier's Site

Technical Specifications

  Win Source Electronics Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 89AH0977 G3R160MT12J
Product Name Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Sic Mosfet, N-Ch, 1.2Kv, 22A, 128W; Mosfet Module Configuration Genesic Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 128000 milliwatts
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