SIC MOSFET N-CH 19A TO263-7 Product overview: G3R160MT12J from GeneSiC Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G3R160MT12J can be used for catalog matching and distributor lookup.
Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series: G3R™
Package: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 128W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
SIC MOSFET, N-CH, 1.2KV, 22A, 128W; MOSFET Module Configuration:Single
SIC MOSFET N-CH 19A TO263-7
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-G3R160MT12J | 89AH0977 | G3R160MT12J | |
| Product Name | 19A MOSFET Transistor | Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Sic Mosfet, N-Ch, 1.2Kv, 22A, 128W; Mosfet Module Configuration Genesic Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 1200 volts | |||
| Transconductance | 0.0044 kS | |||
| PD | 110 milliwatts | 128000 milliwatts |