The GS66516T-MR is a top-side cooled 650 V enhancement mode GaN transistor in a GaNPX® package with a 9.0 x 7.6 mm² PCB footprint. It has a drain-source on-resistance of 25 mΩ at 25 °C and a continuous drain current rating of 60 A at 25 °C case temperature. The device supports transient gate voltages from -20 V to +10 V and operates with a 0 V to 6 V gate drive. It exhibits zero reverse recovery charge, high switching frequency capability above 10 MHz, and a junction-to-case thermal resistance of 0.27 °C/W. The part is RoHS 3 (6+4) compliant and packaged on a mini-reel with 250 units per reel. It is qualified for operation from -55 °C to +150 °C junction temperature.
MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooled
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Transistors |
| Product Number | GS66516T-MR |
| Product Name | Transistors |
