GaN Systems Inc. MOSFET GS66516T-E02-MR

The GS66516T is a 650 V enhancement mode GaN transistor designed for high-efficiency power conversion applications. It is packaged in a GaNPX® top-side cooled configuration with a 9 mm × 7.6 mm PCB footprint. The device has a maximum continuous drain current of 60 A at 25 °C case temperature and a drain-to-source on-resistance of 25 mΩ at 25 °C. It features a low junction-to-case thermal resistance of 0.3 °C/W and zero reverse recovery loss. The gate drive requirements are 0 V to 6 V, with transient tolerance of -20 V to +10 V. Thermal characteristics and electrical performance are specified for operation from -55 °C to +150 °C junction temperature. The part is RoHS 6 compliant.