GaN Systems Inc. MOSFET GS66502B-E01-MR

The GS66502B is a 650 V enhancement mode gallium nitride power transistor designed for high-efficiency power conversion applications. It features a bottom-side cooled GaNPX® package with a 5.0 x 6.6 mm² PCB footprint and a thermal resistance from junction to case of 2 °C/W. The device has a maximum continuous drain current of 7.5 A at 25 °C case temperature and an on-resistance of 200 mΩ at 25 °C. It supports gate drive voltages from 0 V to 6 V, with transient tolerance up to ±20 V, and exhibits zero reverse recovery charge. The part is RoHS 6 compliant and rated for an operating junction temperature range of -55 °C to +150 °C. It is supplied in a mini-reel pack with 250 units per reel.