The GS61008P-MR is a bottom-side cooled 100 V enhancement mode GaN transistor in a GaNPX® package, designed for high-efficiency power switching in applications such as energy storage systems, AC-DC converters, and fast battery charging. It has a 7.6 x 4.6 mm² PCB footprint and a continuous drain current rating of 90 A at 25 °C case temperature. Its on-resistance is 7 mΩ at 25 °C and 17.5 mΩ at 150 °C. The device features a junction-to-case thermal resistance of 0.55 °C/W, a gate drive voltage range of 0 V to 6 V, and zero reverse recovery loss. It supports transient gate voltages up to ±20 V and operates with a junction temperature range of -55 °C to +150 °C. The part is RoHS 3 compliant and supplied on a mini-reel.
MOSFET 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Transistors |
| Product Number | GS61008P-MR |
| Product Name | Transistors |
