Fuji Electric Corp. of America Power MOSFETs SuperFAP-E3 Model: FMV06N90E

Description
Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.
  • Power MOSFETs - SuperFAP-E3 Model: FMV06N90E - Fuji Electric Corp. of America
    Fuji Electric Corp. of America
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Description
Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.
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Datasheet
Datasheet Summary
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The FMV06N90E is an N-channel silicon power MOSFET designed for switching regulators and DC-DC converters. It is packaged in a TO-220F(SLS) case with a maximum drain-source voltage of 900 V and a continuous drain current of 6 A. The device features a low on-state resistance of up to 2.5 Ω at ID=3A and VGS=10V, a narrow gate threshold voltage range of 3.5 to 4.5 V, and high avalanche durability with a non-repetitive avalanche energy rating of 323.6 mJ. It operates within a junction temperature range of -55°C to +150°C and has a thermal resistance from junction to case of 2.6 °C/W. The part meets AEC-Q200 and RoHS standards.

Datasheet Summary
Powered by GS/AI

The FMV06N90E is an N-channel silicon power MOSFET designed for switching regulators and DC-DC converters. It is packaged in a TO-220F(SLS) case with a maximum drain-source voltage of 900 V and a continuous drain current of 6 A. The device features a low on-state resistance of up to 2.5 Ω at ID=3A and VGS=10V, a narrow gate threshold voltage range of 3.5 to 4.5 V, and high avalanche durability with a non-repetitive avalanche energy rating of 323.6 mJ. It operates within a junction temperature range of -55°C to +150°C and has a thermal resistance from junction to case of 2.6 °C/W. The part meets AEC-Q200 and RoHS standards.

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Power MOSFETs - SuperFAP-E3 Model: FMV06N90E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Edison, NJ, United States
Power MOSFETs
SuperFAP-E3 Model: FMV06N90E
Power MOSFETs SuperFAP-E3 Model: FMV06N90E
Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

Supplier's Site Datasheet

Technical Specifications

  Fuji Electric Corp. of America
Product Category Power MOSFET
Product Number SuperFAP-E3 Model: FMV06N90E
Product Name Power MOSFETs
V(BR)DSS 900 volts
rDS(on) 2.5 ohms
IDSS 6000 milliamps
QG 33 nC
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