SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation, and high-temperature operation. Power semiconductors that make use of SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in various types of industrial equipment, general motor drives UPS, PCS, and more.
| Fuji Electric Corp. of America | |
|---|---|
| Product Category | Semiconductor Power Modules |
| Product Number | Model: FDCY10S65 |
| Product Name | SiC - Schottky Barrier Diodes |
| Technology | SiC |
| Package | TO-247 |
| Input Voltage | 1.8 volts |
