Fuji Electric Corp. of America SiC - Schottky Barrier Diodes Model: FDCP10S65

SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation, and high-temperature operation. Power semiconductors that make use of SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in various types of industrial equipment, general motor drives UPS, PCS, and more.