Foshan Blue Rocket Electronics Co.,Ltd. Transistors BRCS030N10SHBD

Description
100V 212A 3.8mΩ@6V 260W 3V@250uA 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - BRCS030N10SHBD - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 212A 3.8mΩ@6V 260W 3V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - BRCS030N10SHBD - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
BRCS030N10SHBD
Transistors BRCS030N10SHBD
100V 212A 3.8mΩ@6V 260W 3V@250uA 1 N-Channel TO-263 MOSFETs ROHS

100V 212A 3.8mΩ@6V 260W 3V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number BRCS030N10SHBD
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS206 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS206
View Details
7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor - QPD1011 - Qorvo
Qorvo
7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
QPD1011
Specs
Transistor Technology / Material GaN
Package Type DFN / SMT
View Details
502A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E502 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
502A IGBT MODULE FOR ONE PHASE 600/690V
SK-H1-QOUT-E502
Specs
Transistor Type IGBT
View Details
Transistor - 32488412 - Radwell International
Fuji Electric Corp. of America
Transistor
2SC3318
View Details