First Sensor AG Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9 3001345

Description
These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range Low gain slope above bias voltage Potentially low bias operation Low temperature coefficient Active surface diameter of up to 5 mm
Datasheet
Description
These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range Low gain slope above bias voltage Potentially low bias operation Low temperature coefficient Active surface diameter of up to 5 mm
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9 - 3001345 - First Sensor AG
Berlin, Germany
Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9
3001345
Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9 3001345
These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range Low gain slope above bias voltage Potentially low bias operation Low temperature coefficient Active surface diameter of up to 5 mm

These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels.

Features:

  • Fast rise time in 900 nm range
  • Low gain slope above bias voltage
  • Potentially low bias operation
  • Low temperature coefficient
  • Active surface diameter of up to 5 mm
Supplier's Site Datasheet
Sheung Wan, Hong Kong
Photodiodes
3001345
Photodiodes 3001345
Photodiodes AD230-9 TO (TO52S1gw; Ubr 160-200V)

Photodiodes AD230-9 TO (TO52S1gw; Ubr 160-200V)

Buy Now Datasheet

Technical Specifications

  First Sensor AG VAST STOCK CO., LIMITED
Product Category Photodiodes Photodiodes
Product Number 3001345 3001345
Product Name Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9 Photodiodes
Photodiode Type Avalanche Photodiode
Photodiode Spectral Response IR
Spectral Response Range 750 to 930 nm (7500 to 9300 Å)
Photodiode Material Silicon
Unlock Full Specs
to access all available technical data

Similar Products

Integrating Sphere Detector, Collimated Beam, 5.3 in., 220-1100 nm - 819C-UV-5.3-CAL - Newport MKS
Specs
Spectral Response Range 200 to 1100 nm (2000 to 11000 Å)
View Details
Photodiodes - 2121833 - RS Components, Ltd.
RS Components, Ltd.
Specs
Photodiode Spectral Response IR
Peak Sensitivity Wavelength 5000 nm (50000 Å)
Photodiode Package Ceramic
View Details
Si photodiodes - S15193 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type PIN Photodiode
Photodiode Spectral Response Visible; IR
Spectral Response Range 380 to 1000 nm (3800 to 10000 Å)
View Details
Photodiodes - 247240 - RS Components, Ltd.
OSRAM Opto Semiconductors
Specs
Photodiode Type PIN Photodiode
Spectral Response Range 400 to 1100 nm (4000 to 11000 Å)
Peak Sensitivity Wavelength 850 nm (8500 Å)
View Details
2 suppliers