EVVO Semi Single Bipolar Transistors TIP36C

The TIP36C is a PNP silicon epitaxial-base power transistor in a TO-3P plastic package, designed for power amplifier and switching applications. It has a collector-to-emitter voltage rating of -140 V, a collector current of -10 A, and a total power dissipation of 125 W at 25℃ ambient temperature. The junction temperature range is -55℃ to 150℃. Thermal resistance is 1.0 ℃/W with a water-cooled heat sink and 50 ℃/W under free air conditions. The DC current gain (hFE) ranges from 55 to 160 at VCE=5 V and IC=1 A. The TO-3P package measures 15.10-15.90 mm in height, 19.30-20.30 mm in width, and 19.00-21.00 mm in length. The device meets RoHS compliance and is intended for use with its complementary NPN counterpart, the TIP35C.