EVVO Semi Single Bipolar Transistors TIP35C

The TIP35C is an NPN silicon epitaxial-base power transistor in a TO-3P plastic package, intended for power amplifier and switching applications. It has a collector-to-emitter voltage rating of 140 V, a continuous collector current of 10 A, and a total power dissipation of 125 W at 25°C ambient temperature. The junction temperature operates up to 150°C. Thermal resistance is 1.0°C/W with a water-cooled heat sink and 50°C/W in free air. DC current gain (hFE) ranges from 55 to 160 at VCE=5 V and IC=1 A. The TO-3P package measures 15.10 to 15.90 mm in height, 19.30 to 20.30 mm in width, and 19.00 to 21.00 mm in length. The complementary PNP device is the TIP36C.