EVVO Semi Single Bipolar Transistors MJW3281A

The MJW3281A is an NPN silicon power transistor designed for high-fidelity audio amplifier output stages, with a complementary pairing to the MJW1302A. It is packaged in a TO-247 case, measuring 20.20 mm in length, 18.20 mm in width, and 26.20 mm in height. The device supports a collector-emitter voltage of 260 V, a collector current of 15 A, and a power dissipation of 200 W at 25℃ junction temperature. Its junction-to-case thermal resistance is 0.63 ℃/W. Electrical specifications include a DC current gain (hFE) ranging from 8 to 80, a collector-emitter saturation voltage up to 4 V at 15 A, and a transition frequency of 4 MHz. Operating and storage temperatures range from -55℃ to 150℃. The part meets no stated industry standards.