EVVO Semi Single Bipolar Transistors MJW1302A

The MJW1302A is a PNP epitaxial silicon power transistor designed for high-fidelity audio amplifier output stages, complementing the MJW3281A. It is packaged in a TO-247 case with dimensions of 20.2 mm maximum length, 18.2 mm maximum width, and 26.2 mm maximum height. The device has a collector-emitter voltage rating of -260 V, a continuous collector current of -15 A, and a maximum collector power dissipation of 200 W at Tc=25°C. Its junction-to-case thermal resistance is 0.63°C/W, with a maximum junction temperature of 150°C and storage temperature range of -55°C to 150°C. Electrical specifications include a DC current gain (hFE) of 20 to 80 at -8 A collector current and a collector-emitter saturation voltage of -1.4 V at -8 A and -0.8 A base current. The minimum transition frequency is 4 MHz.