EVVO Semi Single Bipolar Transistors MJE15030

Description
SILICON NPN POWER TRANSISTOR, TO
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Description
SILICON NPN POWER TRANSISTOR, TO
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Datasheet
Datasheet Summary
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MJE15030 is a silicon NPN power transistor in a TO-220C package, designed for high-frequency driver applications in audio amplifiers. It has a collector-base voltage rating of 150 V, a collector-emitter voltage rating of 150 V, and a continuous collector current of 8 A. The DC current gain is specified at 40 min at 3.0 A and 20 min at 4.0 A. The transition frequency is 30 MHz at 0.5 A and 10 V. Thermal resistance from junction to case is 2.5 °C/W. The junction and storage temperature ranges are -65 °C to 150 °C. The device meets RoHS standards and is complemented by type MJE15031.

Datasheet Summary
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MJE15030 is a silicon NPN power transistor in a TO-220C package, designed for high-frequency driver applications in audio amplifiers. It has a collector-base voltage rating of 150 V, a collector-emitter voltage rating of 150 V, and a continuous collector current of 8 A. The DC current gain is specified at 40 min at 3.0 A and 20 min at 4.0 A. The transition frequency is 30 MHz at 0.5 A and 10 V. Thermal resistance from junction to case is 2.5 °C/W. The junction and storage temperature ranges are -65 °C to 150 °C. The device meets RoHS standards and is complemented by type MJE15031.

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Single Bipolar Transistors - 5272-MJE15030-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
5272-MJE15030-ND
Single Bipolar Transistors 5272-MJE15030-ND
SILICON NPN POWER TRANSISTOR, TO

SILICON NPN POWER TRANSISTOR, TO

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 5272-MJE15030-ND
Product Name Single Bipolar Transistors
Polarity NPN
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